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High purity tungsten ingot (W) Basic information |
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Molecular Formula |
W |
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Purity |
99.99 |
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CAS.No |
7440-33-7 |
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Molecular Weight |
183.84 |
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Density |
19.3 g/mL |
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Fusing Point |
5660 ℃ |
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Boiling Point |
3410 ℃ |
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Flash Point |
-23 ℃ |
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Heat of Fusion |
3.37×104J/mol |
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Heat of Gasification |
7.369×105J/mol |
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Solubility |
It is chemically stable, does not react with air and water at room temperature, does not react with acid, bromine and iodine, but can be passivated. Reacts with a mixture of aqua regia, hydrofluoric acid and nitric acid. Avoid contact with halogens and strong oxidants. Mixed acid soluble in nitric acid and hydrofluoric acid. Fused with a mixture of sodium hydroxide and sodium carbonate. Slightly soluble in nitric acid, sulfuric acid, aqua regia; Insoluble in water, hydrofluoric acid, potassium hydroxide. |
In the manufacture of electronic devices, tungsten targets can be used to manufacture electronic tubes, transistors, integrated circuits, etc. Due to the high purity, high density and other characteristics of tungsten target, it can ensure the performance stability and reliability of electronic devices.
In vacuum coating, tungsten targets can be used as evaporation sources for the manufacture of various thin film materials. Because the tungsten target has the characteristics of high hardness and high temperature resistance, it can ensure the performance stability and reliability of the film material.
